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Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially Grown on Si0.8Ge0.2/ Si Substrates
Conference Papers
Overview
Additional Document Info
Overview
Authors
D Gu
Helmut Baumgart
K Tapily
P Shrestha
Publication Date
2008
Presented At Event
ECS Transactions
Conference
Additional Document Info
Start Page
159
Volume
16
Issue
4