Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially Grown on Si0.8Ge0.2/ Si Substrates

Conference Papers

Authors

Publication Date

  • 2008

    • Presented At Event

  • ECS Transactions  Conference

    • Start Page

  • 159

    • Volume

  • 16

    • Issue

  • 4