Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially Grown on Si0.8Ge0.2/ Si Substrates

Conference Papers

Publication Date

  • 2008
  • Presented At Event

  • ECS Transactions  Conference
  • Start Page

  • 159
  • Volume

  • 16
  • Issue

  • 4